參數(shù)資料
型號(hào): APM4500K
廠商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N-and P-Channel)
中文描述: 雙增強(qiáng)型MOS管(N溝道和P溝道)
文件頁數(shù): 2/13頁
文件大?。?/td> 675K
代理商: APM4500K
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
www.anpec.com.tw
2
APM4500
APM4500
Min.
Typ.
Symbol
Parameter
Test Condition
Max.
Unit
Static
N-Ch
20
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
μ
A
P-Ch
-20
V
V
DS
=16V , V
GS
=0V
N-Ch
1
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=-16V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250
μ
A
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=
±
12V , V
DS
=0V
V
GS
=
±
12V , V
DS
=0V
V
GS
=4.5V , I
DS
=8A
P-Ch
-1
μ
A
N-Ch
0.5
0.7
1
V
GS(th)
Gate Threshold Voltage
P-Ch
-0.45
-1
V
N-Ch
±100
I
GSS
Gate Leakage Current
P-Ch
±100
nA
22
26
V
GS
=2.5V , I
DS
=5.2A
N-Ch
30
36
V
GS
=-4.5V , I
DS
=-4.3A
V
GS
=-2.5V , I
DS
=-2A
80
90
R
DS(ON)
a
Drain-Source On-state
Resistance
P-Ch
105
115
m
I
SD
=1.7A , V
GS
=0V
N-Ch
0.8
1.3
V
SD
a
Diode Forward Voltage
I
SD
=-1.25A , V
GS
=0V
P-Ch
-0.7
-1.3
V
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
N-Channel
P-Channel
Unit
V
DSS
V
GSS
I
D
I
DM
Drain-Source Voltage
20
-20
Gate-Source Voltage
±12
±12
V
*
Maximum Drain Current – Continuous
8
-4.3
Maximum Drain Current – Pulsed
35
-17
A
T
A
=25
°
C
2.5
2.5
P
D
Maximum Power Dissipation
T
A
=100
°
C
1.0
1.0
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
Storage Temperature Range
-55 to 150
°
C
R
θ
jA
Thermal Resistance – Junction to Ambient
62.5
°
C/W
* Surface Mounted on FR4 Board, t
10 sec.
Notes
a
: Pulse test ; pulse width
300
μ
s, duty cycle
2
%
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