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參數(shù)資料
| 型號： | APL502B2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 139K |
| 代理商： | APL502B2 |
APL502B2_L(G)
050-5896
Rev
E
2-2010
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
I
D
,DRAIN
CURRENT
(AMPERES)
C,
CAP
ACIT
ANCE
(pF)
400
100
10
1
0.1
400
100
10
1
0.1
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, FORWARD SAFE OPERATING AREA
FIGURE 11, MAXIMUM FORWARD SAFE OPERATING AREA
.01
.1
1
10
50
C,
CAP
ACIT
ANCE
(pF)
30,000
10,000
5,000
1,000
500
100
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 12, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Scaling for Different Case & Junction
Temperatures:
I
D = ID (TC = 25°C)*(TC - TJ)/125
T
J = 125
°C
T
C = 75
°C
DC line
10mS
1mS
100mS
13mS
R
ds(on)
I
DM
1
10
100
800
1
10
100
800
DC line
100mS
10mS
100mS
13mS
R
ds(on)
I
DM
C
iss
C
oss
C
rss
100mS
1mS
T
J = 150
°C
T
C = 25
°C
e1 SAC 96.5% Sn, 3.0% Ag, 0.5% Cu Plated
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APL502B2G | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APL502J | 功能描述:MOSFET N-CH 500V 52A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APL502L | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:LINEAR MOSFET |
| APL502LG | 功能描述:MOSFET N-CH 500V 58A TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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