參數(shù)資料
型號: AP9T18GEJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 40 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 126K
代理商: AP9T18GEJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ G-S Diode embedded
BVDSS
20V
▼ Capable of 2.5V gate drive
RDS(ON)
14mΩ
▼ Surface mount package
ID
40A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
200523061-1/4
AP9T18GEH/J
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
±12
Continuous Drain Current, VGS @ 4.5V
40
Continuous Drain Current, VGS @ 4.5V
25
Pulsed Drain Current
1
160
Total Power Dissipation
31
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.25
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D S
TO-252(H)
S
G
D
G
D
S
TO-251(J)
相關PDF資料
PDF描述
AP9T18GEH 40 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9U18GH 37 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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