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參數(shù)資料
| 型號： | AP9U18GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 125K |
| 代理商： | AP9U18GH |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
20V
▼ Low On-resistance
RDS(ON)
14mΩ
▼ Low Gate Voltage Drive
ID
37A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
Thermal Data
.
Storage Temperature Range
Total Power Dissipation
25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.2
Continuous Drain Current, VGS @ 10V
24
Pulsed Drain Current
1
140
Gate-Source Voltage
±12
Continuous Drain Current, VGS @ 10V
37
Parameter
Rating
Drain-Source Voltage
20
200831071-1/4
AP9U18GH
RoHS-compliant Product
G D
S
TO-252(H)
G
D
S
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
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