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參數(shù)資料
| 型號： | AP9997GH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 97K |
| 代理商： | AP9997GH-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
120mΩ
▼ Fast Switching Characteristic
ID
11A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
℃
/W
Rthj-a
62.5
℃
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
110
℃
/W
Data and specifications subject to change without notice
Parameter
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current, VGS @ 10V
7
Pulsed Drain Current
1
30
Storage Temperature Range
Total Power Dissipation
34.7
-55 to 150
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
11
Total Power Dissipation
3
2
Parameter
Rating
Drain-Source Voltage
100
201006022
1
AP9997GH/J-HF
Halogen-Free Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Thermal Data
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.The through-hole version (AP9997GJ) are
available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
相關PDF資料 |
PDF描述 |
|---|---|
| AP9997GJ-HF | 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9997GJ | 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9997GH | 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP9997GK | 3.2 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP99T03GP-HF | 120 A, 30 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP9997GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GK | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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