參數(shù)資料
型號(hào)： AP9987GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 3.5 A, 80 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 4/5頁
文件大?。?/td> 208K
代理商： AP9987GM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9987GM
4
Q
VG
4.5V
QGS
QGD
QG
Charge
10
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
3
6
9
12
15
010
20
30
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =3A
V DS =40V
V DS =50V
V DS =64V
0.01
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
t
T
0.02
0
10
20
30
0246
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
相關(guān)PDF資料
PDF描述
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