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參數(shù)資料
| 型號： | AP9980GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 21.3 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 218K |
| 代理商： | AP9980GJ |
AP9980GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
60
0
3
6
9
12
15
18
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
6.0V
5.0V
4.5V
V G =3.0V
0
10
20
30
40
50
0369
12
15
18
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
6.0V
5.0V
4.5V
V G =3.0V
38
42
46
50
54
357
9
11
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =8 A
T C =25
o C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =12 A
V G =10V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9980GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9980J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9980M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9985GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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