參數(shù)資料
型號(hào): AP9980GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 21.3 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/6頁
文件大?。?/td> 218K
代理商: AP9980GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
80V
▼ Single Drive Requirement
RDS(ON)
45mΩ
▼ Fast Switching Performance
ID
21.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.0
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
41.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.33
Continuous Drain Current, VGS @ 10V
13.4
Pulsed Drain Current
1
80
Gate-Source Voltage
+25
Continuous Drain Current, VGS @ 10V
21.3
Parameter
Rating
Drain-Source Voltage
80
1
AP9980GH/J
RoHS-compliant Product
200810172
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9980GJ) are
available for low-profile applications.
G
D
S
TO-251(J)
G D
S
TO-252(H)
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