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參數(shù)資料
| 型號(hào)： | AP9979GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | AP9979GJ |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9979GH/J
Q
VG
4.5V
QGS
QGD
QG
Charge
10
100
1000
10000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
14
0
102030
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eVoltage
(V)
V DS =30 V
V DS =38V
V DS =48 V
I D =13 A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
The
rmal
Re
sponse
(
R
thjc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
10
20
30
02
46
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
ain
C
u
rr
ent
(
A
)
T j =150
o C
T j =25
o C
V DS =5V
4
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| AP9979GH | 20 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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| AP9980GJ | 21.3 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9980GH | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980H | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9980J | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
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