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參數(shù)資料
| 型號(hào)： | AP9962GMA |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, APAK-5 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | AP9962GMA |
AP9962GMA
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3/4
0
30
60
90
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
20
40
60
80
100
0.0
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0.4
0.8
1.2
1.6
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =20A
V G =10V
10
30
50
70
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =16 A
T C =25 ℃
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
0.0
10.0
20.0
30.0
40.0
50.0
0
102030
40506070
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =4.5V
V GS =10V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP9962GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9962J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP9962M | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963AGP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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