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參數(shù)資料
| 型號(hào)： | AP9962GMA |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 36 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, APAK-5 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | AP9962GMA |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=20A
-
20
mΩ
VGS=4.5V, ID=16A
-
30
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.8
-
2.5
V
gfs
Forward Transconductance
2
VDS=10V, ID=20A
-
20
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=32V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=20A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=30V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
8
-
ns
tr
Rise Time
ID=20A
-
48
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=1Ω
-7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1160
1860
pF
Coss
Output Capacitance
VDS=25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.25
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=20A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=20A, VGS=0V,
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
25
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
2/4
AP9962GMA
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| AP9962GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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