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參數(shù)資料
| 型號： | AP9960GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 42 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 71K |
| 代理商： | AP9960GJ |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.032
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
-
16
mΩ
VGS=4.5V, ID=18A
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
30
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=32V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=20A
-
18
-
nC
Qgs
Gate-Source Charge
VDS=20V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
9
-
ns
tr
Rise Time
ID=20A
-
110
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=1Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500
-
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=45A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt = 100A/us
-
27.4
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9960GH/J
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP9960GM-HF | 7.8 A, 40 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP9962AGH | 32 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP9962AGM-HF | 7 A, 40 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP9962BGH-HF | 31 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP9962GH | 32 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9960GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGD | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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