參數(shù)資料
型號: AP9960GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 42 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 71K
代理商: AP9960GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
40V
▼ Low Gate Charge
RDS(ON)
16mΩ
▼ Fast Switching
ID
42A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
45
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.36
Continuous Drain Current, VGS @ 10V
26
Pulsed Drain Current
1
195
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
42
Parameter
Rating
Drain-Source Voltage
40
201007042
AP9960GH/J
Pb Free Plating Product
G D
S
TO-252(H)
G D
S
TO-251(J)
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9960GJ) are available for low-profile applications.
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