參數(shù)資料
型號(hào): AP9960GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 42 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 4/4頁
文件大小: 71K
代理商: AP9960GH
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP9960GH/J
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T c =25
o C
Single Pulse
10us
100us
1ms
10ms
100ms
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rm
a
liz
ed
Th
er
ma
lR
e
sp
o
n
se
(
R
thjc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
14
0
10203040
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
t
o
S
o
u
rc
e
Vol
tage
(V)
I D =20A
V DS =12V
V DS =16V
V DS =20V
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(pF)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
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