參數(shù)資料
型號(hào): AP9915J
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 90K
代理商: AP9915J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
400V
1.0
Ω
5.5A
Description
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
1
P
D
@T
C
=25
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
mJ
A
mJ
E
AS
I
AR
E
AR
T
STG
T
J
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
1.7
62
Unit
/W
/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data & specifications subject to change without notice
AP730P
Parameter
Rating
400
5.5
3.5
23
74
0.59
260
5.5
7
-55 to 150
-55 to 150
200219032
Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching ,
ruggedized device design , low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-
AC converters and high current high speed switching circuits.
±
30
G
DS
TO-220
G
D
S
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