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參數(shù)資料
| 型號： | AP75T10S |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強模式 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 116K |
| 代理商： | AP75T10S |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
BV
DSS
R
DS(ON)
I
D
100V
15m
Ω
72A
▼
▼
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
GS
I
D
@T
C
=25
℃
V
V
A
I
D
@T
C
=100
℃
I
DM
P
D
@T
C
=25
℃
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
0.9
62
Units
℃
/W
℃
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
138
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.11
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
45
260
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
±20
72
Parameter
Rating
Drain-Source Voltage
100
AP75T10S/P
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75T10P) are available for low-profile applications.
GDS
TO-263(S)
GDS
TO-220(P)
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