參數(shù)資料
型號(hào): AP9565GEJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 0K
代理商: AP9565GEJ
AP9565GEH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
0
20
40
60
80
024
68
-V DS , Drain-to-Source Voltage (V)
-I
D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
0.6
1.0
1.4
1.8
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D = -16 A
V G = -10V
0.0
5.0
10.0
15.0
20.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
20
40
60
02
46
8
-V DS , Drain-to-Source Voltage (V)
-I
D
,Dr
ai
n
C
u
rr
ent
(A
)
T C = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
20
40
60
80
100
120
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =- 8 A
T C =25
20.0
30.0
40.0
50.0
60.0
0
1020
3040
-I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =-4.5V
V GS =-10V
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