參數(shù)資料
型號(hào): AP9565GEJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 0K
代理商: AP9565GEJ
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-40V
▼ Lower On-resistance
RDS(ON)
38mΩ
▼ Fast Switching Characteristic
ID
-24A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.5
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
-15
Pulsed Drain Current
1
-80
35.7
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
-40
+16
-24
0.28
AP9565GEH/J
Rating
RoHS-compliant Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
200903094
1
G
D
S
TO-252(H)
G
D
S
TO-251(J)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9565GEJ) is
available for low-profile applications.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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