參數(shù)資料
型號(hào): AP9565BGJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 97K
代理商: AP9565BGJ
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-40V
▼ Simple Drive Requirement
RDS(ON)
52mΩ
▼ Fast Switching Characteristic
ID
-17A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
5.0
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
-17
0.2
AP9565BGH/J
Rating
-40
RoHS-compliant Product
Continuous Drain Current, VGS @ 10V
-11
Pulsed Drain Current
1
-60
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
+20
Linear Derating Factor
25
-55 to 150
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
200903092
-55 to 150
Thermal Data
Parameter
1
G
D
S
G
D
S
TO-252(H)
G
D
S
TO-251(J)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9565BGJ) is
available for low-profile applications.
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
相關(guān)PDF資料
PDF描述
AP9565BGH 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565GEH 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565GEJ 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9566GH 13.6 A, 40 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9566GM 4.5 A, 40 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET
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