參數(shù)資料
型號(hào): AP85U03GMT
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 173K
代理商: AP85U03GMT
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
30V
5m
Ω
82A
SO-8 Compatible
Low On-resistance
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
I
D
@T
A
=25
I
D
@T
A
=100
I
DM
P
D
@T
C
=25
P
D
@T
A
=25
E
AS
Single Pulse Avalanche Energy
4
T
STG
T
J
Operating Junction Temperature Range
Units
V
V
A
A
A
A
W
W
mJ
Symbol
Value
2.5
25
Units
/W
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
3
Max.
Max.
Data & specifications subject to change without notice
Total Power Dissipation
Total Power Dissipation
50
5
201008072-1/4
Thermal Data
Parameter
Storage Temperature Range
-55 to 150
-55 to 150
57.6
Gate-Source Voltage
Continuous Drain Current
±20
82
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
24
15
200
Parameter
Rating
30
Drain-Source Voltage
AP85U03GMT
RoHS-compliant Product
The Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
S
The GEMPAK package is special for DC-DC converters application and
the foot print is compatible with SO-8 with backside heat sink.
SSSG
GEMPAK
DDD
D
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