參數(shù)資料
型號: AP90T03GR
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, TO-262, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 81K
代理商: AP90T03GR
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On- resistance
BV
DSS
R
DS(ON)
I
D
30V
4m
Ω
75A
Simple Drive Requirement
Fast Switching Characteristic
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@Tc=25
I
D
@Tc=100
I
DM
P
D
@Tc=25
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
1.3
62
Units
/W
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
200120041
AP90T03GR
Pb Free Plating Product
Parameter
Rating
30
±20
75
63
350
96
0.7
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Parameter
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
DS
TO-262(R)
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