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參數(shù)資料
| 型號： | AP6925GY |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1600 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 160K |
| 代理商： | AP6925GY |
AP6925GY
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
0
2
4
6
0
0.5
1
1.5
2
-V DS , Drain-to-Source Voltage (V)
-I
D
,Drain
Current
(A)
T A =25
o C
- 5 0 V
- 4 .0V
- 3 .0V
- 2.5 V
V G = - 2.0 V
0
1
2
3
4
5
6
0112
23344
-V DS , Drain-to-Source Voltage (V)
-I
D
,Drain
Current
(A)
T A =125
o C
- 5.0 V
- 4 .0V
- 3 .0V
- 2 .5V
V G = - 2.0 V
100
125
150
175
200
024
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-1. 2 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75
100
125
150
T j , Junction Temperature (
o C)
Norm
alize
dR
DS(
ON)
I D =- 1.6 A
V G = -4.5 V
0.0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =125
o C
100
120
140
160
180
02
46
-I D , Drain Current (A)
R
DS(
ON)
(m
)
V GS =-4.5V
V GS =-2.5V
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