參數(shù)資料
型號: AP70T03AS
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 74K
代理商: AP70T03AS
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low Gate Charge
RDS(ON)
9mΩ
▼ Fast Switching
ID
60A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=100℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
53
-55 to 175
Operating Junction Temperature Range
-55 to 175
Linear Derating Factor
0.36
Continuous Drain Current, VGS @ 10V
43
Pulsed Drain Current
1
195
Gate-Source Voltage
± 20
Continuous Drain Current, VGS @ 10V
60
Parameter
Rating
Drain-Source Voltage
30
200909032
AP70T03AS/P
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03AP) are available for low-profile applications.
G
D
S
TO-263(S)
G
D
S
TO-220(P)
相關PDF資料
PDF描述
AP70T03GJ-HF 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP70T03GH-HF 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP72T02GH-HF 62 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP72T02GJ-HF 62 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP72T02GH 62 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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