參數(shù)資料
型號: AP60T03GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 98K
代理商: AP60T03GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low Gate Charge
RDS(ON)
12m
▼ Fast Switching Characteristic
ID
45A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
201009306
Thermal Data
Parameter
1
Linear Derating Factor
0.3
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
32
Pulsed Drain Current
1
120
Total Power Dissipation
44
-55 to 175
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
45
Parameter
Rating
Drain-Source Voltage
30
AP60T03GH/J
RoHS-compliant Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Total Power Dissipation
3
2
Operating Junction Temperature Range
-55 to 175
G D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T03GJ)
are available for low-profile applications.
相關(guān)PDF資料
PDF描述
AP60T03GH 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP60T03GP 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T03GS 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP60T06GJ-HF 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP60T06GP-HF 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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