參數(shù)資料
型號: AP60T06GJ-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大小: 93K
代理商: AP60T06GJ-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
55V
▼ Lower On-resistance
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
46A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
Total Power Dissipation
1.13
29
Pulsed Drain Current
1
160
Thermal Data
Parameter
Total Power Dissipation
44.6
-55 to 150
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
Parameter
Rating
Drain-Source Voltage
55
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
201102151
1
AP60T06GJ-HF
-55 to 150
46
Halogen-Free Product
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-251 package is widely preferred for all commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-251(J)
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