參數(shù)資料
型號： AP603-PCB1960
英文描述： High Dynamic Range 7W 28V HBT Amplifier
中文描述： 高動態(tài)范圍7瓦28V的異質(zhì)結(jié)雙極晶體管放大器
文件頁數(shù)： 1/14頁
文件大?。?/td> 1182K
代理商： AP603-PCB1960
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Product Features
800 – 2200 MHz
+38.5 dBm P1dB
-50 dBc ACLR @ 1W P
AVG
-51 dBc IMD3 @ 1W PEP
15% Efficiency @ 1W P
AVG
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 5.5W CW Pout
Lead-free/RoHS-compliant
5x6 mm power DFN package
Applications
Mobile Infrastructure
High Power Amplifier (HPA)
Product Description
The AP603 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2200 MHz applications with up to +38.5 dBm of
compressed 1dB power.
The AP603 uses a high reliability, high voltage
InGaP/GaAs HBT process technology. The device
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP603 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
The AP603 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
Functional
Diagram
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz,
f = 1 MHz, Vcc = 28V, 25
C
-80
-70
-60
-50
-40
-30
26
28
30
32
34
36
Output Power, PEP (dBm)
I
80 mA
160 mA
260 mA
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
Typ
2140
+30
11.8
10
8.2
-50
-51
4
246
14.6
+38.2
160
+5
+28
Max
2200
800
Absolute Maximum Rating
Parameter
Storage Temperature, T
stg
Junction Temperature, T
J
For 10
hours MTTF
RF Input Power (CW tone), P
in
Breakdown Voltage C-B, BV
CBO
Breakdown Voltage C-E, BV
CEO
Quiescent Bias Current, I
CQ
Power Dissipation, P
DISS
Rating
-55 to +125 oC
192 oC
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
320 mA
9.5 W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +30 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
dBm
mA
V
V
Typical
1960
+30
13
13
7.5
-49
-52
230
15.5
+38.5
160
+5
+28
940
+30
17
11
5.5
-52
-52
217
16.6
+38.5
2140
+30
11.8
10
8.2
-50
-51
246
14.6
+38.2
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25
°
C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 160 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP603 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 5.5W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 5.5W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 5.5W CW Pout.
Ordering Information
Part No.
AP603-F
AP603-PCB900
AP603-PCB1960
AP603-PCB2140
Description
High Dynamic Range 28V 7W HBT Amplifier
920-960 MHz Evaluation board
1930-1990 MHz Evaluation board
2110-2170 MHz Evaluation board
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