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參數(shù)資料
| 型號： | AP622 |
| 英文描述： | UMTS-band 4W HBT Amplifier Module |
| 中文描述： | UMTS的頻段4瓦異質(zhì)結(jié)雙極晶體管放大器模塊 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 201K |
| 代理商： | AP622 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 4 March 2007
AP622
UMTS-band 4W HBT Amplifier Module
Product Features
2.11 – 2.17 GHz
28 dB Gain
-55 dBc ACLR @ +23 dBm Pavg
+35 dBm P1dB
+28 V Supply
Power Down Mode
RoHS-compliant flange-mount pkg
Applications
WCDMA Power Amplifiers
Repeaters
Product Description
The AP622 power amplifier module is a two-stage power
amplifier module that operates over the frequency range of
2110 – 2170 MHz and is housed in a small, RoHS-
compliant, flange-mount package. The multi-stage
amplifier module has a 28 dB gain, P1dB of 35dBm, and
ACLR of –55dBc at +23 dBm output power for WCDMA
applications.
The AP622 uses a +28V high reliability InGaP/GaAs HBT
process technology and does not require any external
matching components. The amplifier module operates off a
+28V supply; an internal active bias allows the amplifier to
maintain high linearity over temperature. It has the added
feature of a +5V power down control pin. A low-cost
metal housing allows the device to have a low thermal
resistance to ensure long lifetimes. All devices are 100%
RF and DC tested.
The AP622 is targeted for use as a driver stage amplifier in
wireless infrastructure where high linearity and high power
is required. This combination makes the device an
excellent candidate for next generation multi-carrier 3G
base stations.
Functional Diagram
Top View
Pin No.
1
2 / 4
3 / 5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA
Parameter
Units
Operational Bandwidth
MHz
Output Channel Power
dBm
Power Gain
dB
ACLR
dBc
Operating Current, Icc
mA
Collector Efficiency
%
Output P1dB
dBm
Quiescent Current, Icq
mA
Vpd
V
Vcc
V
Absolute Maximum Rating
Min
Typ
Max
2110 - 2170
+23
28
-55
135
5
+35
120
+5
+28
Parameter
Operating Case Temperature
Storage Temperature
Rating
-40 to +85
°
C
-55 to +150
°
C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AP622
Description
PCS-band 4W HBT Amplifier Module
1 2 3 4 5 6
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