參數(shù)資料
型號(hào)： AP603-F
元件分類： 放大器
英文描述： 800 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： 6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14
文件頁(yè)數(shù)： 5/14頁(yè)
文件大?。?/td> 1200K
代理商： AP603-F
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 13 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
2110-2170 MHz High Efficiency Reference Design
Targeted for Linearized Power Amplifiers
Typical WCDMA Performance at 25
°C
at a channel power of +32 dBm
Frequency
2140 MHz
W-CDMA Channel Power
+32 dBm
Power Gain
11.5 dB
Input Return Loss
20 dB
Output Return Loss
11 dB
ACLR
-34 dBc
Operating Current, Icc
170 mA
Collector Efficiency
32.5 %
Output P1dB
+38.5 dBm
Quiescent Current, Icq
40 mA
Vpd, Vbias
+5 V
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (17.3
° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.875” (81.6
° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.070” (6.5
° @ 2140 MHz) from the edge of the AP603 (U1).
6. The center of C28 is placed at 0.190” (17.7
° @ 2140 MHz) from the edge of the AP603 (U1).
7. The center of C29 is placed at 0.300” (28.0
° @ 2140 MHz) from the center of C28.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
2110-2170 MHz High Efficiency Application Circuit Performance Plots
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
-70
-60
-50
-40
-30
22
24
26
28
30
32
Average Output Power (dBm)
ACLR
(
dBc)
Uncorrected, Upper / Lower
DPD Corrected, Upper / Lower
Single-carrier WCDMA TM 1+64 DPCH,
No Clipping, PAR = 9.5 dB @ 0.01% CCDF
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
-70
-60
-50
-40
-30
22
24
26
28
30
32
Average Output Power (dBm)
ACLR
(
dBc)
Uncorrected, Upper / Lower
DPD Corrected, Upper / Lower
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
DPD Correction vs ACLR vs. Output Power
WCDMA, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
-70
-60
-50
-40
-30
22
24
26
28
30
32
Average Output Power (dBm)
ACLR
(
dBc)
Uncorrected, Upper / Lower
DPD Corrected, Upper / Lower
Single-carrier WCDMA TM 1+64 DPCH,
33% Clipping, PAR = 6.6 dB @ 0.01% CCDF
Gain vs. Output Power
CW tone, 2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
8
9
10
11
12
13
20
24
28
32
36
40
Output Power (dBm)
Ga
in
(d
B)
Icc vs. Output Power
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
60
80
100
120
140
160
180
22
24
26
28
30
32
Average Output Power (dBm)
Collec
tor
Cu
rrent
(m
A)
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
Efficiency vs. Output Power
2140 MHz, Vcc = 28V, Icq = 40 mA, 25 C
0
10
20
30
40
22
24
26
28
30
32
Average Output Power (dBm)
C
o
llect
or
Effic
iency
(%)
Single-carrier WCDMA TM 1+64 DPCH,
69% Clipping, PAR = 8.6 dB @ 0.01% CCDF
0.8pF
See note 3
3.6 pF
See note 5
See note 4
V
BI
AS
V
PD
GND
V
CC
W = 0.030”
L = 0.980”
C28
3.6 pF
See note 6
C29
0.4 pF
See note 7
2.3 k
C21
C7
1000pF
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