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參數(shù)資料
| 型號： | AP603-F |
| 元件分類： | 放大器 |
| 英文描述： | 800 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 1200K |
| 代理商： | AP603-F |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
Product Features
800 – 2200 MHz
+38.5 dBm P1dB
-50 dBc ACLR @ 1W PAVG
-51 dBc IMD3 @ 1W PEP
15% Efficiency @ 1W PAVG
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 5.5W CW Pout
Lead-free/RoHS-compliant
5x6 mm power DFN package
Applications
Mobile Infrastructure
High Power Amplifier (HPA)
Product Description
The AP603 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2200 MHz applications with up to +38.5 dBm of
compressed 1dB power.
The AP603 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
The device
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP603 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
The AP603 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
Functional Diagram
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
-80
-70
-60
-50
-40
-30
26
28
30
32
34
36
Output Power, PEP (dBm)
IM
D3
(dBc)
80 mA
160 mA
260 mA
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Parameter
Units Min
Typ
Max
Operational Bandwidth
MHz
800
2200
Test Frequency
MHz
2140
Output Channel Power
dBm
+30
Power Gain
dB
11.8
Input Return Loss
dB
10
Output Return Loss
dB
8.2
ACLR
dBc
-50
IMD3 @ +30 dBm PEP
dBc
-51
PIN_VPD Current, Ipd
mA
4
Operating Current, Icc
mA
246
Collector Efficiency
%
14.6
Output P1dB
dBm
+38.2
Quiescent Current, Icq
mA
160
Vpd, Vbias
V
+5
Vcc
V
+28
Absolute Maximum Rating
Parameter
Rating
Storage Temperature, Tstg
-55 to +125 C
Junction Temperature, TJ
For 106 hours MTTF
192 C
RF Input Power (CW tone), Pin
Input P6dB
Breakdown Voltage C-B, BVCBO
80 V @ 0.1 mA
Breakdown Voltage C-E, BVCEO
51 V @ 0.1 mA
Quiescent Bias Current, ICQ
320 mA
Power Dissipation, PDISS
9.5 W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 160 mA
Parameter
Units
Typical
Test Frequency
MHz
940
1960
2140
Channel Power
dBm
+30
Power Gain
dB
17
13
11.8
Input Return Loss
dB
11
13
10
Output Return Loss
dB
5.5
7.5
8.2
ACLR
dBc
-52
-49
-50
IMD3 @ +30 dBm PEP
dBc
-52
-51
Operating Current, Icc
mA
217
230
246
Collector Efficiency
%
16.6
15.5
14.6
Output P1dB
dBm
+38.5
+38.2
Quiescent Current, Icq
mA
160
Vpd, Vbias
V
+5
Vcc
V
+28
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25
° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 160 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP603 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 5.5W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 5.5W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 5.5W CW Pout.
Ordering Information
Part No.
Description
AP603-F
High Dynamic Range 28V 7W HBT Amplifier
AP603-PCB900
920-960 MHz Evaluation board
AP603-PCB1960 1930-1990 MHz Evaluation board
AP603-PCB2140 2110-2170 MHz Evaluation board
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP603-PCB1960 | 功能描述:射頻開發(fā)工具 1930-1990MHz Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP603-PCB2140 | 功能描述:射頻開發(fā)工具 2110-2170MHz Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP603-PCB900 | 功能描述:射頻開發(fā)工具 869-960MHz Eval Brd 17dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP604A-F | 功能描述:射頻放大器 AMP. 15W. 28V HBT RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AP6050R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSU BENCH AUTO RANGE 1000W |
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