參數(shù)資料
型號(hào)： AP602-PCB900
英文描述： High Dynamic Range 4W 28V HBT Amplifier
中文描述： 高動(dòng)態(tài)范圍4瓦28V的異質(zhì)結(jié)雙極晶體管放大器
文件頁數(shù)： 6/11頁
文件大小： 850K
代理商： AP602-PCB900
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 6 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
2010-2025 MHz Application Circuit
Typical Performance at 25
°
C at an
output power of +27 dBm
Frequency
Total Output Power
Power Gain
Input Return Loss
Output Return Loss
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2015 MHz
+27 dBm
13.7 dB
12 dB
8.5 dB
-44 dBc
110 mA
16.5 %
+36 dBm
80 mA
+5 V
+28 V
Notes:
1. The primary RF microstrip line is 50
Ω
.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.095” (8.3
°
@ 2015 MHz) from the center of C2.
4. The center of C2 is placed at 0.135” (11.8
°
@ 2015 MHz) from the edge of the AP602 (U1).
5. The center of C30 is placed at 0.530” (50.9
°
@ 2015 MHz) from the edge of the AP602 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a
λ
.
7. The main RF trace is cut at component location L3 for this particular reference design.
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
10
11
12
13
14
15
28
30
32
34
36
38
Output Power (dBm)
G
-40
C
25
C
85
C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25
C
-25
-20
-15
-10
-5
0
1.96
1.98
2
2.02
2.04
2.06
2.08
Frequency (GHz)
S
S11
S22
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
0
10
20
30
40
50
20
24
28
32
36
Output Power (dBm)
C
-40
C
25
C
85
C
ACLR vs. Output Power vs. Icq
3-carrier TDSCDMA, Vcc = 28V, 2015MHz
-56
-52
-48
-44
-40
16
18
Average Output Power (dBm)
20
22
24
26
A
Icq = 80mA
Icq=100mA
3C-TDSCDMA, PAR = 9.6 dB
@0.01% prob, BW = 1.28MHz,
Sample clk = 32 MHz
IQ Mod Filter = 2.1 MHz
Efficiency vs. Output Power
3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz
0
2
4
6
8
10
16
18
20
22
24
26
Average Output Power (dBm)
C
IMD vs. Output Power
CW 2-tone signal, 2015 MHz,
f = 1 MHz, 28V, 80 mA Icq, 25
C
-80
-70
-60
-50
-40
22
24
26
28
30
32
Output Power, PEP (dBm)
I
IMD3L
IMD3U
IMD5
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
C7
1000pF
C30
2.4pF
C2
2.7pF
See note 4
V
B
V
P
G
V
C
4.7 nH
See note 3
L3
C7
1000pF
W = .030”
L = .980”
C27
10pF
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