參數(shù)資料
型號(hào)： AP602-PCB900
英文描述： High Dynamic Range 4W 28V HBT Amplifier
中文描述： 高動(dòng)態(tài)范圍4瓦28V的異質(zhì)結(jié)雙極晶體管放大器
文件頁(yè)數(shù)： 1/11頁(yè)
文件大小： 850K
代理商： AP602-PCB900
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Product Features
800 – 2400 MHz
+35.7 dBm P1dB
-52 dBc ACLR @ W P
AVG
-47 dBc IMD3 @ W PEP
16% Efficiency @ W P
AVG
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 3W CW Pout
Lead-free/RoHS-compliant
5x6 mm power DFN package
Applications
Mobile Infrastructure HPA
WiBro HPA
Product Description
The AP602 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2400 MHz applications with up to +35.7 dBm of
compressed 1dB power.
The AP602 uses a high reliability, high voltage
InGaP/GaAs HBT process technology. The device
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP602 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
The AP602 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
Functional
Diagram
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 80 mA, 2140 MHz, 25
C
-65
-60
-55
-50
-45
-40
19
21
23
25
27
29
Average Output Power (dBm)
A
26 V
28 V
30 V
32 V
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
Typ
2140
+27
13
9
9
-52
-47
2
112
15.7
+35.7
80
+5
+28
Max
2200
800
Absolute Maximum Rating
Parameter
Storage Temperature, T
stg
Junction Temperature, T
J
For 10
hours MTTF
RF Input Power (CW tone), P
in
Breakdown Voltage C-B, BV
CBO
Breakdown Voltage C-E, BV
CEO
Quiescent Bias Current, I
CQ
Power Dissipation, P
DISS
Rating
-55 to +125 oC
192 oC
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
160 mA
4.7 W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
dBm
mA
V
V
Typical
1960
+27
14.2
12
9
-50
-51
103
17
+35.5
80
+5
+28
940
+27
15.5
11
6.4
-50
-62
103
17
+35.7
2140
+27
13
9
9
-52
-47
112
15.7
+35.7
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25
°
C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 80 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP602 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 3W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 3W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 3W CW Pout.
Ordering Information
Part No.
AP602-F
AP602-PCB900
AP602-PCB1960
AP602-PCB2140
Description
High Dynamic Range 28V 4W HBT Amplifier
869-960 MHz Evaluation board
1930-1990 MHz Evaluation board
2110-2170 MHz Evaluation board
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參數(shù)描述
AP603 制造商:WJCI 制造商全稱:WJCI 功能描述:High Dynamic Range 7W 28V HBT Amplifier
AP-603 功能描述:AIR FILTRATION PANEL AP-603 制造商:3m 系列:Versaflo?，AP-600 零件狀態(tài):有效 類型:空氣過濾面板 標(biāo)準(zhǔn)包裝:1
AP603-F 功能描述:射頻放大器 800-2200MHz 11.8dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AP603-PCB1960 功能描述:射頻開發(fā)工具 1930-1990MHz Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AP603-PCB2140 功能描述:射頻開發(fā)工具 2110-2170MHz Brd 12dB Gain RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
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