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參數(shù)資料
| 型號(hào)： | AP504 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 1705 MHz - 1790 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, FM-6 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 315K |
| 代理商： | AP504 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 April 2007
AP504
DCS-band 4W HBT Amplifier Module
Performance Graphs (cont’d)
ACPR vs. Output Power
CDMA2000 SR1, 1FA , fc=1765 MHz, +25 °C, Vcc=12V, Icq=850mA
-90
-80
-70
-60
18
20
22
24
26
Total Output Power (dBm)
A
C
P
R
(d
Bc
)
1.98 MHz offset
885 kHz offset
Icc vs. Output Power
1765 MHz, Vcc=12V, Icq=850mA
760
780
800
820
840
860
18
20
22
24
26
28
Output Channel Power (dBm)
Icc
(m
A)
-40 °C
+25 °C
+85 °C
Icc / PAE vs. Output Power
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
0
0.2
0.4
0.6
0.8
1
20
22
24
26
28
30
32
34
Output Power (dBm)
Ic
c
(mA
)/
P
A
E
PAE
Icc
Output Power / Gain vs. Input Power
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
28
30
32
34
36
38
-4
-2
0
2
4
6
Input Power (dBm)
Ga
in
(d
B)
/
Pou
t
(d
Bm)
Pout
Gain
IMD vs. Output Power per tone
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
-80
-70
-60
-50
-40
-30
18
20
22
24
26
28
Output Power per tone (dBm)
IMD
(dB)
IMD3_Upper
IMD3_Lower
IMD5
OIP3 vs. Output Power per tone
1765 MHz, +25 °C, Vcc=12V, Icq=850mA
30
35
40
45
50
55
18
20
22
24
26
28
Output Power per tone (dBm)
OIP3
(dBm
)
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