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參數(shù)資料
| 型號(hào)： | AP622 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, MODULE-6 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 195K |
| 代理商： | AP622 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 4 March 2007
AP622
UMTS-band 4W HBT Amplifier Module
Product Features
2.11 – 2.17 GHz
28 dB Gain
-55 dBc ACLR @ +23 dBm Pavg
+35 dBm P1dB
+28 V Supply
Power Down Mode
RoHS-compliant flange-mount pkg
Applications
WCDMA Power Amplifiers
Repeaters
Product Description
The AP622 power amplifier module is a two-stage power
amplifier module that operates over the frequency range of
2110 – 2170 MHz and is housed in a small, RoHS-
compliant,
flange-mount
package.
The
multi-stage
amplifier module has a 28 dB gain, P1dB of 35dBm, and
ACLR of –55dBc at +23 dBm output power for WCDMA
applications.
The AP622 uses a +28V high reliability InGaP/GaAs HBT
process technology and does not require any external
matching components. The amplifier module operates off a
+28V supply; an internal active bias allows the amplifier to
maintain high linearity over temperature. It has the added
feature of a +5V power down control pin.
A low-cost
metal housing allows the device to have a low thermal
resistance to ensure long lifetimes. All devices are 100%
RF and DC tested.
The AP622 is targeted for use as a driver stage amplifier in
wireless infrastructure where high linearity and high power
is required.
This combination makes the device an
excellent candidate for next generation multi-carrier 3G
base stations.
Functional Diagram
Top View
Pin No.
Function
1
RF Output
2 / 4
Vcc
3 / 5
Vpd
6
RF Input
Case
Ground
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
2110 - 2170
Output Channel Power
dBm
+23
Power Gain
dB
28
ACLR
dBc
-55
Operating Current, Icc
mA
135
Collector Efficiency
%
5
Output P1dB
dBm
+35
Quiescent Current, Icq
mA
120
Vpd
V
+5
Vcc
V
+28
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AP622
PCS-band 4W HBT Amplifier Module
1 2 3
4 5 6
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