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參數(shù)資料
| 型號(hào)： | AP4957M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | AP4957M |
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low On-Resistance
BV
DSS
R
DS(ON)
I
D
-30V
24m
Ω
-7.7A
▼
Simple Drive Requirement
▼
Dual P MOSFET Package
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
62.5
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
200420041
AP4957M
Rating
-30
±20
-6.1
-30
2
0.016
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
S1G1
S2G2
D1
D1
D2
D2
SO-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
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