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參數(shù)資料
| 型號： | AP50L02S |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | AP50L02S |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low Gate Charge
Simple Drive Requirement
Fast Switching
BV
DSS
R
DS(ON)
I
D
25V
17m
Ω
40A
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
P
D
@T
C
=25
℃
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
2.8
62
Unit
℃
/W
℃
/W
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data & specifications subject to change without notice
200218032
Thermal Data
Parameter
Pulsed Drain Current
1
Total Power Dissipation
140
44.6
Operating Junction Temperature Range
-55 to 150
0.36
-55 to 150
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
40
27
Drain-Source Voltage
Gate-Source Voltage
25
AP50L02S/P
Parameter
Rating
±
20
G
D
S
GDS
TO-263(S)
GDS
TO-220(P)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP50L02P) is available for low-profile applications.
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| AP50T10GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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