參數(shù)資料
型號(hào): AP4953GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 5 A, 30 V, 0.053 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/4頁
文件大小: 80K
代理商: AP4953GM
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
BV
DSS
R
DS(ON)
I
D
-30V
53m
Ω
-5A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
62.5
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
20020513
AP4953GM
Rating
- 30
±20
- 5
0.016
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Storage Temperature Range
Operating Junction Temperature Range
- 4
- 20
2
Pb Free Plating Product
Thermal Data
Parameter
-55 to 150
-55 to 150
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
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