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參數(shù)資料
| 型號(hào)： | AP4435GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | AP4435GJ-HF |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4435GH/J-HF
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
400
800
1200
1600
2000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
0
10
203040
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -26 A
V DS = -25 V
1
10
100
1000
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off)tf
VDS
VGS
10%
90%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4435GM | 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP4435GYT-HF | 11 A, 30 V, 0.021 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP4437GM-HF | 10.4 A, 30 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP4438GM-HF | 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4435GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4435GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4435GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP4435M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4436GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
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