參數(shù)資料
型號(hào): AP4435GYT-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 11 A, 30 V, 0.021 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁數(shù): 1/4頁
文件大?。?/td> 95K
代理商: AP4435GYT-HF
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
-30V
▼ Small Size & Lower Profile
RDS(ON)
21mΩ
▼ RoHS Compliant & Halogen-Free
ID
-11A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
6
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
35
/W
Data and specifications subject to change without notice
201009214
1
AP4435GYT-HF
Rating
Halogen-Free Product
-30
+25
-11
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
-55 to 150
Continuous Drain Current
3
-8.7
Pulsed Drain Current
1
-40
Storage Temperature Range
3.57
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
3x3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
D
S
G
PMPAK
3x3
G
D
S
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