參數(shù)資料
型號: AP4435D
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: P溝道增強(qiáng)型功率MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 82K
代理商: AP4435D
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Fast Switching Speed
PDIP-8 Package
BV
DSS
R
DS(ON)
I
D
-30V
20m
Ω
-9A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
50
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
2.5
0.02
-55 to 150
-55 to 150
Operating Junction Temperature Range
Continuous Drain Current
3
Pulsed Drain Current
1
- 5.8
- 50
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201114031
AP4435D
Rating
- 30
±20
- 9
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D
D
D
D
S
S
S
G
PDIP-8
G
D
S
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