參數(shù)資料
型號: AP4435M
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: P-CHANNEL ENHANCEMENT MODE
中文描述: P溝道增強型
文件頁數(shù): 1/6頁
文件大小: 89K
代理商: AP4435M
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
BV
DSS
R
DS(ON)
I
D
-30V
20m
Ω
-8A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
50
Unit
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
2.5
0.02
-55 to 150
-55 to 150
Operating Junction Temperature Range
Continuous Drain Current
3
Pulsed Drain Current
1
-6
-50
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
20020430
AP4435M
Rating
-30
±
20
-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
S
S
G
D
D
D
D
SO-8
G
D
S
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