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參數(shù)資料
| 型號(hào)： | AP4432GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | AP4432GM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=8A
-
15
mΩ
VGS=4.5V, ID=5A
-
28
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.8
-
2.5
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
9.2
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=10A
-
12.5
20
nC
Qgs
Gate-Source Charge
VDS=24V
-
2.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
7.5
-
ns
tr
Rise Time
ID=1A
-
8.5
-
ns
td(off)
Turn-off Delay Time
RG=8.2Ω,VGS=10V
-
22.5
-
ns
tf
Fall Time
RD=15Ω
-
20.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
780
1250
pF
Coss
Output Capacitance
VDS=10V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.8
1.2
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.9A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP4432GM
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
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