參數資料
型號: AP4224GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 10 A, 30 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數: 4/4頁
文件大?。?/td> 104K
代理商: AP4224GM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP4224GM
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
10
20
30
40
50
Q
G
, Total Gate Charge (nC)
V
G
V
DS
=15V
V
DS
=20V
V
DS
=24V
I
D
=10A
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135
/W
t
T
0.02
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