- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375346 > AP4224GM (ADVANCED POWER ELECTRONICS CORP) N-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AP4224GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 10 A, 30 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 104K |
| 代理商： | AP4224GM |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=10A
-
-
14
m
Ω
V
GS
=4.5V, I
D
=7A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=10A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=10A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3
Ω,
V
GS
=10V
R
D
=15
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
20
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
1
-
3
V
Forward Transconductance
-
16
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
1
Drain-Source Leakage Current (T
j
=70
o
C)
-
-
25
uA
I
GSS
Gate-Source Leakage
Total Gate Charge
2
-
-
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
-
23
35
nC
Gate-Source Charge
-
6
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
14
-
nC
-
12
-
ns
Rise Time
-
8
-
ns
Turn-off Delay Time
-
34
-
ns
Fall Time
-
16
-
ns
Input Capacitance
-
1910
3070
pF
Output Capacitance
-
400
-
pF
Reverse Transfer Capacitance
-
280
-
pF
Gate Resistance
f=1.0MHz
-
0.9
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
t
rr
Q
rr
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=1.7A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/μs
-
-
-
1.2
-
V
ns
30
Reverse Recovery Charge
-
24
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
℃
/W when mounted on min. copper pad.
2/4
AP4224GM
±
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4224M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226AGM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226D | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4224LGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-Resistance, Capable of 2.5V Gate Drive |
| AP4224M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4224PP | 功能描述:電氣外殼配件 RoHS:否 制造商:Hammond Manufacturing 產(chǎn)品:Rack Accessories 類型: 面板寬度: 面板高度: 外部寬度: 外部高度: 外部深度: 顏色:Black |
| AP4226AGM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4226BGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。