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參數(shù)資料
| 型號(hào)： | AP40N03S |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | AP40N03S |
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AP40N03S
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
G
0
2
4
6
8
10
12
14
16
0
5
10
Q
G
, Total Gate Charge (nC)
30
35
40
V
G
V
DS
=24V
V
DS
=20V
V
DS
=16V
I
D
=20A
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
(V)
I
S
T
j
= 25
o
C
T
j
= 150
o
C
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
(V)
C
f=1.0MHz
Ciss
Coss
Crss
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP40P03GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GI | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP40P03GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP40P03GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge Simple Drive Requirement |
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