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參數(shù)資料
| 型號(hào)： | AP40N03S |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 91K |
| 代理商： | AP40N03S |
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP40N03S
0
5
10
15
20
25
30
35
40
45
50
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
0
10
20
30
40
50
60
0
50
100
150
T
c
,Case Temperature (
o
C)
P
D
(
1
10
100
1000
1
10
100
V
DS
(V)
I
D
(
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP40P03GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GI | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP40P03GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP40P03GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge Simple Drive Requirement |
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