參數(shù)資料
型號: AP3801GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 5 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 4/4頁
文件大?。?/td> 69K
代理商: AP3801GM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP3801GM
0
4
8
12
16
0
4
8
12
16
Q
G
, Total Gate Charge (nC)
-
G
I
D
= -5A
V
DS
= -25V
10
100
1000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MH
C
iss
C
oss
C
rss
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125
/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
100us
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
0
5
10
15
20
0
2
4
6
-V
GS
, Gate-to-Source Voltage (V)
-
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=-5V
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