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參數(shù)資料
| 型號(hào)： | AP3801GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 5 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 69K |
| 代理商： | AP3801GM |
AP3801GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
0
10
20
30
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=150
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
=-3.0V
25
75
125
175
225
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=-3A
T
A
=25
o
C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=-5A
V
G
= -10V
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
10
20
30
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=25
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
=-3.0V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, Source-to-Drain Voltage (V)
-
S
(
T
j
=25
o
C
T
j
=150
o
C
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|---|---|
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