參數資料
型號: AP3310GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數: 5/6頁
文件大?。?/td> 105K
代理商: AP3310GJ
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5
AP3310GH/J
0
1
2
3
4
5
024
68
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =-2.8A
V DS =-6V
10
100
1000
13
579
11
13
-V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
1
10
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V SD (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
0.5
1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS
(t
h
)(V
)
相關PDF資料
PDF描述
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