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參數(shù)資料
| 型號： | AP2603Y |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | P CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P通道增強型功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | AP2603Y |
AP2603Y
65m
Ω
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1
E+08
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
= -4.2A
V
GS
= -4.5V
0
10
20
30
40
0
1
2
3
4
5
6
7
8
9
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=25
o
C
-5.0V
-4.0V
-3.0V
V
G
= -2.0V
0
4
8
12
16
20
24
28
32
36
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-
D
V
G
= -2.0V
-5.0V
-4.0V
-3.0V
T
A
=150
o
C
0.01
0.1
1
10
0
0.4
0.8
1.2
1.6
-V
SD
, Source-to-Drain Voltage (V)
-
S
(
T
j
=25
o
C
T
j
=150
o
C
0
0.5
1
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-
G
I
D
=-4.2A
T
A
=25
o
C
20
60
100
140
180
220
0
2
4
6
8
10
12
-V
GS
, Gate-to-Source Voltage (V)
R
D
)
I
D
T
A
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2604GY | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2604GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2604Y | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP2605GY | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2605GY0-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
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