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參數(shù)資料
| 型號(hào)： | AP2603Y |
| 廠(chǎng)商： | Electronic Theatre Controls, Inc. |
| 英文描述： | P CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P通道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 74K |
| 代理商： | AP2603Y |
AP2603Y
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.1
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-4.5A
-
-
53
m
Ω
V
GS
=-4.5V, I
D
=-4.2A
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-1.8V, I
D
=-1.0A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-2.8A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=
I
D
=-4.2A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-4.2A
R
G
=6
Ω
,
V
GS
=-10V
R
D
=3.6
Ω
V
GS
=0V
V
DS
=-15V
f=1.0MHz
-
-
65
m
Ω
-
-
-
-
-
9
-
-
-
120
250
-1.2
-
-1
-10
±
100
m
Ω
m
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=55
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
10.6
2.32
3.68
5.9
3.6
32.4
2.6
740
167
126
16
-
-
-
-
-
-
1200
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
27.7
22
Max.
-1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-1.2A, V
GS
=0V
I
S
=-4.2A, V
GS
=0V,
dI/dt=100A/μs
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 156
℃
/W when mounted on min. copper pad.
±12V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2604GY | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2604GY-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
| AP2604Y | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP2605GY | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2605GY0-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Fast Switching Characteristic, Lower Gate Charge |
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